CdZnTe single crystals for radiation detector and IR substrate applications must be of high quality and controlled purity. The growth of such crystals from a melt is very difficult due to the low thermal conductivity and high latent heat of the material, and the ease with which dislocations, twins and precipitates are introduced during crystal growth. These defects may be related to solute transport phenomena and thermal stresses associated with the solidification process. As a result, production of high quality material requires excellent thermal control during the entire growth process. A comprehensive model is being developed to account for radiation and conduction within the furnace, thermal coupling between the furnace and growth crucible, and finally the thermal stress fields within the growing crystal which result from the thermal conditions imposed on the crucible.

As part of this effort, the present work examines the heat transfer and fluid flow within the crucible, using thermal boundary conditions obtained from experimental measurements. The 2-D axisymetric numerical model uses the deforming finite element method, with allowance made for melt convection, solidification with latent heat release and conjugate heat transfer between the solid material and the melt. Results are presented for several stages of growth, including a time-history of the solid-liquid interface (1365 K isotherm). The impact of melt convection, thermal end conditions and furnace temperature gradient on the growth interface is evaluated. Future work will extend the present model to include radiation exchange within the furnace, and a transient analysis for studying solute transport and thermal stress.

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