Abstract

Quasi-static and fatigue tests under uniaxial tensile loading condition were carried out for single-crystal-silicon in a direction of <110> by using on-chip testing method. A film specimen and tensile testing system were integrated on a silicon chip. A measurement system allowing both quasi-static and dynamic loading was newly introduced. In quasi-static loading measured fracture strain of silicon thin-film was 3.4%. Fatigue fractures were observed during 103∼106 cycles when the maximum strains of sinusoidal wave were higher than the average fracture strain of tensile tests.

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