For faster signal propagation in integrated circuits, new materials with lower dielectric constant (low-k) values are required with copper metal lines. Although integration of low-k materials (k<3.0) has been demonstrated, but ultra low-k materials possess many challenges due to their poor mechanical integrity and weak adhesion to other interconnects. During chemical mechanical planarization (CMP) generation of several defects including delamination of low-k materials is severe problem in the integration of these materials. Different slurries and pad introduces different levels of defect and also batch-to-batch variation in consumables is often makes process more difficult. In this study we have investigated the tribological properties of CMP pad and wafer interface while monitoring coefficient of friction and acoustic emission data. Signals are analyzed in order to online defect monitoring, batch-to-batch consumable variations and different consumables effects.
- Tribology Division
In-Situ Tribological Properties Monitoring and Chemical Mechanical Characterization of Planarization Process
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Sikder, A, Gitis, N, Vinogradov, M, & Daugela, A. "In-Situ Tribological Properties Monitoring and Chemical Mechanical Characterization of Planarization Process." Proceedings of the ASME/STLE 2004 International Joint Tribology Conference. ASME/STLE 2004 International Joint Tribology Conference, Parts A and B. Long Beach, California, USA. October 24–27, 2004. pp. 55-58. ASME. https://doi.org/10.1115/TRIB2004-64346
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