Some thin films were prepared as solid lubricants on the surfaces of silicon nitride ceramic disk and ball. DLC film about 500–800 nm thickness was deposited on the ceramic surfaces using ion implantation and deposition technology. The surface roundness measure results, as well as 80 to 90 nm, showed that DLC film was shaped uniformly on the ceramic ball surfaces. The ball-on-disk tests showed DLC coating on silicon nitride surfaces could lead the friction coefficient to about 0.1 and endure about 7h at 1.5GPa and 30 mm/s. Ball milling technology was employed to prepare MoS2 film on the ceramic ball surfaces. The film thickness and tribological test results showed that the thin MoS2 film on the ball surfaces, which hardly changed the surface roughness, also improved their wear behaviors.
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STLE/ASME 2010 International Joint Tribology Conference
October 17–20, 2010
San Francisco, California, USA
Conference Sponsors:
- Tribology Division
ISBN:
978-0-7918-4419-9
PROCEEDINGS PAPER
Self-Lubricated Modification for Silicon Nitride Ceramic Ball Surface Available to Purchase
Le Gu,
Le Gu
Harbin Institute of Technology, Harbin, China
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Guangze Tang,
Guangze Tang
Harbin Institute of Technology, Harbin, China
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Chuanwei Zhang,
Chuanwei Zhang
Harbin Institute of Technology, Harbin, China
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Cuini Jing,
Cuini Jing
Harbin Institute of Technology, Harbin, China
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Liqin Wang
Liqin Wang
Harbin Institute of Technology, Harbin, China
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Le Gu
Harbin Institute of Technology, Harbin, China
Guangze Tang
Harbin Institute of Technology, Harbin, China
Chuanwei Zhang
Harbin Institute of Technology, Harbin, China
Cuini Jing
Harbin Institute of Technology, Harbin, China
Liqin Wang
Harbin Institute of Technology, Harbin, China
Paper No:
IJTC2010-41161, pp. 59-60; 2 pages
Published Online:
April 14, 2011
Citation
Gu, L, Tang, G, Zhang, C, Jing, C, & Wang, L. "Self-Lubricated Modification for Silicon Nitride Ceramic Ball Surface." Proceedings of the STLE/ASME 2010 International Joint Tribology Conference. STLE/ASME 2010 International Joint Tribology Conference. San Francisco, California, USA. October 17–20, 2010. pp. 59-60. ASME. https://doi.org/10.1115/IJTC2010-41161
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