The prediction of dishing and erosion caused by CMP is desired as they adversely affect the electrical properties of interconnects in integrated circuits. For a model to properly capture these phenomena, it must account for the time dependent surface evolution in CMP. This work employs the previously introduced Particle-Augmented Mixed Lubrication (PAML) model to predict dishing and erosion in CMP. By using PAML to model the polishing of a patterned wafer, it is possible to predict the dishing and erosion experienced during CMP.

Volume Subject Area:
Nanotribology
Topics:
Erosion, Physics, Semiconductor wafers, Electrical properties, Integrated circuits, Lubrication, Particulate matter, Polishing
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Copyright © 2009
 by ASME
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