Chemical mechanical polishing (CMP) of ultra-low-k (ULK) dielectic materials is challenging, as they are susceptible to fracture under typical CMP pressures [1]. Low-pressure (lp) CMP is one of the solutions for polishing ULK dielectrics [1]. In order to implement lp-CMP the process should be optimized to maximize the material removal rate (MRR).

Volume Subject Area:
Contact Mechanics
Topics:
Dielectric materials, Fracture (Materials), Fracture (Process), Particulate matter, Polishing, Pressure, Semiconductor wafers
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