A numerical simulation study was carried out to shed light on the effects of applied crucible rotation and static magnetic field during the THM (travelling heater method) growth of bulk SiGe single crystals. The simulation results show that the application of crucible rotation weakens the radial silicon concentration gradient due to the effect of centrifugal force. The effects of applied static magnetic field direction and strength on the concentration field in the melt were also studied. It was found that the simultaneous application of crucible rotation and static magnetic field is best to grow large crystals with uniform composition. An optimum combination of crucible rotation rates and applied magnetic field strengths is determined.

This content is only available via PDF.
You do not currently have access to this content.