A novel design for MEMS capacitive pressure sensors is presented that can effectively eliminate the temperature drift in sensor for high temperature applications. The design uses a bilayer membrane made of a thin metal film deposited on the top of membrane to balance the deformation the membrane experiences when the ambient temperature changes. The thermal expansion mismatch of the metal layer and the membrane results in out-of-plane bending if the temperature changes. This deformation can compensate the deformation in the membrane due to the temperature change. By optimizing the dimensions of the top metal layer (shape and thickness), it is possible to minimize the change in the device capacitance due to temperature rise. A coupled-field multiphysics solver in ANSYS® APDL is used for design, simulation and optimization of the sensor’s structure and to solve the governing equations of the coupled electrostatic and structural physics. The membrane material is silicon carbide (SiC), the top metal layer is nickel (Ni) and the substrate is a single-crystal silicon wafer. The thickness and dimensions of top metal layer is optimized using FEM simulations. The results display a very stable capacitance value for a large pressure range and over a wide range of ambient temperature (0–600°C), demonstrating the proposed design can effectively eliminate the temperature effect. Different pressure values ranging from 0.0 to 20 bars have been examined in the simulations and for most of the pressure range, a highly stable capacitance value is observed with less than 0.5% error over 600 °C temperature range.

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