Computer Simulation of Laser Annealing of a Nanostructured Surface

Laser annealing technology is used in mass production of new-generation semiconductor materials and nano-electronic devices like the MOS-based (metal–oxide–semiconductor) integrated circuits. Manufacturing sub-100 nm MOS devices demands application of ultra-shallow doping (junctions), which requires rapid high-temperature annealing to increase dopant electrical activation and remove implantation defects in the silicon [1].