Rapid Prototyping (RP) technology refers to the fabrication of an arbitrary three-dimensional part layer-by-layer. Laser Chemical Vapor Deposition (LCVD) is a promising RP and manufacturing process that deposits metals and ceramics by local heating of a substrate with a laser. Even though many LCVD process planning characteristics are shared with those of more common RP technologies, LCVD process planning requires new efforts due to its unique characteristics. Unlike a conventional RP technology that only builds horizontal planar layers, LCVD can build conformal layers (conform to nonplanar substrates), thin walls, and fibers (rod-shape) as build primitives. Based on these unique characteristics, we have developed the overall approach for LCVD process planning and developed several of the main methods in this approach. In this paper, we report on the overall approach, the conformal slicing algorithm, and two different 1D path generation algorithms. Two examples are presented to illustrate the application of the process planning methods.
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ASME 2003 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference
September 2–6, 2003
Chicago, Illinois, USA
Conference Sponsors:
- Design Engineering Division and Computers and Information in Engineering Division
ISBN:
0-7918-3699-1
PROCEEDINGS PAPER
Generation of Process Plans for Laser Chemical Vapor Deposition
Jae-hyoung Park,
Jae-hyoung Park
Georgia Institute of Technology, Atlanta, GA
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David W. Rosen
David W. Rosen
Georgia Institute of Technology, Atlanta, GA
Search for other works by this author on:
Jae-hyoung Park
Georgia Institute of Technology, Atlanta, GA
David W. Rosen
Georgia Institute of Technology, Atlanta, GA
Paper No:
DETC2003/CIE-48187, pp. 159-167; 9 pages
Published Online:
June 23, 2008
Citation
Park, J, & Rosen, DW. "Generation of Process Plans for Laser Chemical Vapor Deposition." Proceedings of the ASME 2003 International Design Engineering Technical Conferences and Computers and Information in Engineering Conference. Volume 1: 23rd Computers and Information in Engineering Conference, Parts A and B. Chicago, Illinois, USA. September 2–6, 2003. pp. 159-167. ASME. https://doi.org/10.1115/DETC2003/CIE-48187
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