Single event effect occurs when a single energetic particle penetrates sensitive nodes and deposits enough charge by ionization in semiconductor devices. It has become a major reliability concern for spaceflight. Single event effect characteristics analysis methods based on simulation are presented for typical circuit elements in spacecraft power systems. The failure mechanism and impact factors of single event burnout in trench power MOSFETs are investigated through numerical simulation. The broadening, quenching and capture of single event transients in combinational logics are analyzed by circuit simulation based on a coupled single event transient injection method. A behavioral modeling is introduced to predict single event effect sensitivity of the parallel to serial conversion circuit. The results show that ion-induced holes can spread efficiently to turn on the parasitic bipolar junction transistor and result in stronger carrier multiplication when the ion strikes at the center of the gate region in trench power MOSFETs. Increasing the depth of P+ plugs, decreasing the doping concentration of source regions and using lower drain bias voltages can mitigate single event burnout susceptibility. Using the same load capacitance for each stage inverter and selecting a suitable gate-width ratio are recommended to prevent single event transient broadening in inverter chains. Moreover, the reset pin of D flip-flops in the parallel to serial conversion circuit should be hardened by design according to the behavioral modeling results.
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2017 25th International Conference on Nuclear Engineering
July 2–6, 2017
Shanghai, China
Conference Sponsors:
- Nuclear Engineering Division
ISBN:
978-0-7918-5785-4
PROCEEDINGS PAPER
Single Event Effect Characteristics Analysis of Typical Circuit Elements in Spacecraft Power Systems Available to Purchase
Zhao Wen,
Zhao Wen
Xi’an Jiaotong University, Xi’an, China
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He Chaohui,
He Chaohui
Xi’an Jiaotong University, Xi’an, China
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Chen Wei,
Chen Wei
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Xi’an, China
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Guo Xiaoqiang,
Guo Xiaoqiang
Xi’an Jiaotong University, Xi’an, China
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Cong Peitian,
Cong Peitian
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Xi’an, China
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Zhang Fengqi,
Zhang Fengqi
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Xi’an, China
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Chen Rongmei
Chen Rongmei
Tsinghua University, Beijing, China
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Zhao Wen
Xi’an Jiaotong University, Xi’an, China
He Chaohui
Xi’an Jiaotong University, Xi’an, China
Chen Wei
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Xi’an, China
Guo Xiaoqiang
Xi’an Jiaotong University, Xi’an, China
Cong Peitian
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Xi’an, China
Zhang Fengqi
State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Xi’an, China
Chen Rongmei
Tsinghua University, Beijing, China
Paper No:
ICONE25-67728, V007T10A035; 7 pages
Published Online:
October 17, 2017
Citation
Wen, Z, Chaohui, H, Wei, C, Xiaoqiang, G, Peitian, C, Fengqi, Z, & Rongmei, C. "Single Event Effect Characteristics Analysis of Typical Circuit Elements in Spacecraft Power Systems." Proceedings of the 2017 25th International Conference on Nuclear Engineering. Volume 7: Fuel Cycle, Decontamination and Decommissioning, Radiation Protection, Shielding, and Waste Management; Mitigation Strategies for Beyond Design Basis Events. Shanghai, China. July 2–6, 2017. V007T10A035. ASME. https://doi.org/10.1115/ICONE25-67728
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