TlBr is a kind of semiconductor material. Due to its promising physical properties and can be used at room temperature, it is continually studied as X and gamma ray detectors candidate material. Both of its atomic number and density are high. It also has large band-gap (B = 2.68eV) and low ionization energy. TlBr device exhibits high detection efficiency and excellent energy resolution. It can be easily fabricated or compacted in small housing. So it is a reasonable selection in the fields of nuclear material inspection and safeguards property, national security, spatial and high energy physics researches. The paper investigates the TlBr radioactive detector development and fabrication procedures. The processing detail information and signals collection are emphasized in different section. The prototype detectors were irradiated by Am-241 and corresponding spectrum was obtained. The photoelectric peak at 59.5keV is distinguished visible and the best resolution at 59.5keV is 4.15keV (7%).
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2017 25th International Conference on Nuclear Engineering
July 2–6, 2017
Shanghai, China
Conference Sponsors:
- Nuclear Engineering Division
ISBN:
978-0-7918-5781-6
PROCEEDINGS PAPER
Study on TlBr Radioactive Detector Available to Purchase
He Li-xia,
He Li-xia
China Institute of Atomic Energy, Beijing, China
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Hao Xiao-yong,
Hao Xiao-yong
China Institute of Atomic Energy, Beijing, China
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He Gao-kui
He Gao-kui
China Institute of Atomic Energy, Beijing, China
Search for other works by this author on:
He Li-xia
China Institute of Atomic Energy, Beijing, China
Hao Xiao-yong
China Institute of Atomic Energy, Beijing, China
He Gao-kui
China Institute of Atomic Energy, Beijing, China
Paper No:
ICONE25-66120, V003T13A004; 4 pages
Published Online:
October 17, 2017
Citation
Li-xia, H, Xiao-yong, H, & Gao-kui, H. "Study on TlBr Radioactive Detector." Proceedings of the 2017 25th International Conference on Nuclear Engineering. Volume 3: Nuclear Fuel and Material, Reactor Physics and Transport Theory; Innovative Nuclear Power Plant Design and New Technology Application. Shanghai, China. July 2–6, 2017. V003T13A004. ASME. https://doi.org/10.1115/ICONE25-66120
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