The Single Event Effects (SEE) of Silicon On Insulator (SOI) and bulk-silicon NMOS are simulated using the SENTAURUS-TCAD device simulator. The Source-Drain Penetration Effect, which is caused by a heavy ion, was shown. It is proved that when the feature size of device become less than a certain scale, both Direct Channel Effect and Indirect Channel Effect occur. By comparing the distributions of equipotential lines in the MOSFETs’ channels of the different feature size devices during the ion strikes indirectly, the Source-Drain-Penetration Effect occurs more evidently when the device feature size is getting smaller.
- Nuclear Engineering Division
Simulation of Heavy Ion Source-Drain Penetration Effect in SOI MOS and Bulk MOS
- Views Icon Views
- Share Icon Share
- Search Site
Li, Y, He, C, & Xia, C. "Simulation of Heavy Ion Source-Drain Penetration Effect in SOI MOS and Bulk MOS." Proceedings of the 18th International Conference on Nuclear Engineering. 18th International Conference on Nuclear Engineering: Volume 2. Xi’an, China. May 17–21, 2010. pp. 701-704. ASME. https://doi.org/10.1115/ICONE18-29782
Download citation file: