Thermal rectification as a new phenomenon is attracting great attention. Thermal rectification in silicon nanowires with axial mass gradient is investigated by molecular dynamics simulation. The results of the simulations show that the thermal conductivities are different for the heat flux with opposite directions. The rectification efficiency becomes larger when the mass gradient increases. The effect of temperature gradient on the thermal rectification is also considered. The phonon density of states is calculated to explain the phenomenon. It is found that the interface is responsible to the thermal rectification.
- Nanotechnology Institute
Thermal Rectification in Silicon Nanowires With Mass Gradients
Wang, S, Liang, X, & Xu, X. "Thermal Rectification in Silicon Nanowires With Mass Gradients." Proceedings of the ASME 2008 6th International Conference on Nanochannels, Microchannels, and Minichannels. ASME 2008 6th International Conference on Nanochannels, Microchannels, and Minichannels. Darmstadt, Germany. June 23–25, 2008. pp. 947-951. ASME. https://doi.org/10.1115/ICNMM2008-62240
Download citation file: