There has been a growing interest in developing the miniaturized fluidic devices for transportation, separation and detection of bio-samples. In many of these phenomena electrokinetic effects play an important role. Studies show that in fabricating these devices, if long channels are used, separation efficiency can be improved. In these devices, turns must be induced to integrate a long channel within the small area of a single chip. One of the ensuing results of these turns is serious distortion in flow field that named dispersion. Dispersion can result in degraded separation quality. The present study shows that how dispersion after the turns can be reduced by minimum changing in geometry. It is also shown that how using an optimized distribution for ζ-potential near the turns can reduced the magnitude of dispersion without changing the geometry. The optimized distribution of ζ-potential has been found by genetic algorithm technique. Computer code based on the genetic algorithm has been developed to study the effectiveness of purposed methods.
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ASME 2008 6th International Conference on Nanochannels, Microchannels, and Minichannels
June 23–25, 2008
Darmstadt, Germany
Conference Sponsors:
- Nanotechnology Institute
ISBN:
0-7918-4834-5
PROCEEDINGS PAPER
Reducing Undesired Effects of Turns on Electroosmotic Flow Field in Nanochannels
Saeid Movahed,
Saeid Movahed
Shiraz University, Shiraz, Iran
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Saleh Rezaei Ravesh
Saleh Rezaei Ravesh
Shiraz University, Shiraz, Iran
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Reza Kamali
Shiraz University, Shiraz, Iran
Saeid Movahed
Shiraz University, Shiraz, Iran
Saleh Rezaei Ravesh
Shiraz University, Shiraz, Iran
Paper No:
ICNMM2008-62163, pp. 1043-1049; 7 pages
Published Online:
June 11, 2009
Citation
Kamali, R, Movahed, S, & Ravesh, SR. "Reducing Undesired Effects of Turns on Electroosmotic Flow Field in Nanochannels." Proceedings of the ASME 2008 6th International Conference on Nanochannels, Microchannels, and Minichannels. ASME 2008 6th International Conference on Nanochannels, Microchannels, and Minichannels. Darmstadt, Germany. June 23–25, 2008. pp. 1043-1049. ASME. https://doi.org/10.1115/ICNMM2008-62163
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