The present work measured the thermal conductivities of the silicon nitride films prepared by lower pressure chemical vapor deposition (LPCVD) with thicknesses ranging from 100 nm to 200 nm. The measurements were made at room temperature using the transient photothermal reflectance technique, which is a non-contacting and non-destructive optical approach. The data measured were fitted by genetic algorithm to get the thermal conductivity of thin films and interfacial thermal resistance simultaneously. The results show that thermal conductivities of these films are lower than corresponding bulk material values. The interfacial thermal resistances are in the order of 10−8 m2K/W. It cannot be neglected for the very thin films. Some comparison and analysis for the results were discussed.

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