In this paper we consider the effect of the entrance into the microchannel having two reservoirs on the electric potential and the electric field. For the case when the channel width is much smaller than the reservoir size, as usual, we designed a method to patch the numerical solutions obtained for the reservoir domain and the asymptotic solutions valid for the region near the entrance to the channel which is attached to the reservoir. Based on the assumption of small channel size, we also derived two asymptotic solutions for the potential and the electric field applicable to the reservoir region and to the channel region. Then the working formula has been established which can predict the effect of the electrode and channel size relative to the reservoir on the electric field built inside the channel. It was shown that the working formula is robust and applicable to the wide range of the parameters.
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ASME 4th International Conference on Nanochannels, Microchannels, and Minichannels
June 19–21, 2006
Limerick, Ireland
Conference Sponsors:
- Nanotechnology Institute
ISBN:
0-7918-4760-8
PROCEEDINGS PAPER
The Entrance Effect on the Electric Potential and Field in the Microchannel With Two Reservoirs Available to Purchase
Yong Kweon Suh,
Yong Kweon Suh
Dong-A University, Busan, Korea
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Hyeong Seok Heo,
Hyeong Seok Heo
Dong-A University, Busan, Korea
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Jae Hyun Park
Jae Hyun Park
Dong-A University, Busan, Korea
Search for other works by this author on:
Yong Kweon Suh
Dong-A University, Busan, Korea
Hyeong Seok Heo
Dong-A University, Busan, Korea
Jae Hyun Park
Dong-A University, Busan, Korea
Paper No:
ICNMM2006-96154, pp. 257-262; 6 pages
Published Online:
September 15, 2008
Citation
Suh, YK, Heo, HS, & Park, JH. "The Entrance Effect on the Electric Potential and Field in the Microchannel With Two Reservoirs." Proceedings of the ASME 4th International Conference on Nanochannels, Microchannels, and Minichannels. ASME 4th International Conference on Nanochannels, Microchannels, and Minichannels, Parts A and B. Limerick, Ireland. June 19–21, 2006. pp. 257-262. ASME. https://doi.org/10.1115/ICNMM2006-96154
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