This paper presents a rigorous approach to the simulation of the GaN growth process, which involves dissolution kinetics, transport by thermal convection and crystallization kinetics. So far, a wide range of numerical efforts have been published which provide valuable information on the flow field and temperature distribution in the hydrothermal crystal growth processes; however, no research has attempted to model the mass transfer in the nutrient porous basket nor did they present a modeling of the nutrient/mineralizers/solvent chemical reactions. In addition, the rate of crystallization was not numerically considered in the model. This paper shows the feasibility of developing a robust numerical code based on models that accurately account for the rate of nutrient dissolution and crystallization kinetics. Numerical simulation results revealed that chemical reaction kinetics can directly affect the crystallization rate and is a dominant factor in this phenomenon.

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