In the past decades, heat transport in thin film structures has been extensively studied due to its importance in performance optimization of micro/nano-scale devices. A large amount of heat is generated during the operation of electronic devices and must be dissipated efficiently via dielectric electrical insulating films, thus it is crucial to investigate and engineer the thermal properties of thin film structures. Numerous methods have been developed to measure thin film thermal conductivity, many of which took advantage of electrical heating and temperature sensing such as the 3ω method , scanning thermal microscopy (SThM) , etc. These methods require the heaters/sensors to directly contact the samples surface, inducing the risk to bias the temperature field; also, the contacting components add a significant complexity to the originally simple 2-D film structure, which increases the difficulty of modeling and data analysis.
- Heat Transfer Division
In-Plane Thermal Conductivity of Ultra-Thin Al2O3 Films Measured by Micro-Raman
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Luo, Z, Liu, H, Feng, Y, Ye, P, Chen, YP, & Xu, X. "In-Plane Thermal Conductivity of Ultra-Thin Al2O3 Films Measured by Micro-Raman." Proceedings of the ASME 2013 Heat Transfer Summer Conference collocated with the ASME 2013 7th International Conference on Energy Sustainability and the ASME 2013 11th International Conference on Fuel Cell Science, Engineering and Technology. Volume 1: Heat Transfer in Energy Systems; Thermophysical Properties; Theory and Fundamental Research in Heat Transfer. Minneapolis, Minnesota, USA. July 14–19, 2013. V001T03A005. ASME. https://doi.org/10.1115/HT2013-17170
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