In this letter, we demonstrate theoretically and experimentally that bulk silicon can be employed to overcome the challenge of tuning near field radiation. Theoretical calculation shows that the nanoscale radiation between bulk silicon and silicon dioxide can be tuned by changing the carrier concentration of silicon. Near field radiation measurements are carried out on multiple bulk silicon samples with different doping concentrations. The measured near field conductance agrees well with theoretical predictions, which demonstrates a tuning range from 2 nW/K to 6 nW/K at a gap of ∼60 nm.
- Heat Transfer Division
Tuning Near Field Radiation by Doped Silicon
- Views Icon Views
- Share Icon Share
- Search Site
Shi, J, & Shen, S. "Tuning Near Field Radiation by Doped Silicon." Proceedings of the ASME 2013 Heat Transfer Summer Conference collocated with the ASME 2013 7th International Conference on Energy Sustainability and the ASME 2013 11th International Conference on Fuel Cell Science, Engineering and Technology. Volume 1: Heat Transfer in Energy Systems; Thermophysical Properties; Theory and Fundamental Research in Heat Transfer. Minneapolis, Minnesota, USA. July 14–19, 2013. V001T03A002. ASME. https://doi.org/10.1115/HT2013-17092
Download citation file: