Electrowetting-on-dielectric (EWOD) has attracted as one of the effective on-chip cooling technologies. It enables rapid transport of coolant droplets and heat transfer from target heat sources, while consuming extremely low power for fluid transport. However, a sandwiched configuration in conventional EWOD devices only allows sensible heat transfer, which very limits heat transfer capability of the device. In this paper, we report a novel single-sided EWOD (SEWOD) technology that enables two-phase cooling on a single-sided plate. As a result, heat transfer capability of the SEWOD device can be significantly enhanced. A complete set of droplet manipulation functions necessary for active hot spot cooling has been achieved on SEWOD. Hot spot surface modification to hydrophilic makes a droplet stick on a hot spot and maximize its contact area, greatly improving thermal rejection capability of the device. We have demonstrated two-phase cooling on SEWOD. With successive transportation of four droplets with a volume of 30 μL, the hot spot temperature that was initially heated up to 172°C was able to be stably maintained below 100 °C for 475s. This novel SEWOD-driven cooling technique promises to potentially function as a wickless vapor chamber with enhanced thermal managing capabilities.
- Heat Transfer Division
Active Hot Spot Cooling Controlled by Single-Sided Electrowetting-on-Dielectric (SEWOD)
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Park, S, Cheng, J, & Chen, C(). "Active Hot Spot Cooling Controlled by Single-Sided Electrowetting-on-Dielectric (SEWOD)." Proceedings of the ASME 2012 Heat Transfer Summer Conference collocated with the ASME 2012 Fluids Engineering Division Summer Meeting and the ASME 2012 10th International Conference on Nanochannels, Microchannels, and Minichannels. Volume 2: Heat Transfer Enhancement for Practical Applications; Fire and Combustion; Multi-Phase Systems; Heat Transfer in Electronic Equipment; Low Temperature Heat Transfer; Computational Heat Transfer. Rio Grande, Puerto Rico, USA. July 8–12, 2012. pp. 617-623. ASME. https://doi.org/10.1115/HT2012-58111
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