Nanoscale-synthesized materials hold great promise for the realization of future generation devices. In order to fulfill the exceptional promise, new techniques must be developed that will enable the precise layout and assembly of the heterogeneous components into functional ‘superblocks’. As one promising route to this end, rapid and spatially confined heating capability of laser irradiation has enabled precisely controlled nucleation and subsequent direct growth of nanowires at an arbitrary local region based on vapor-liquid-solid (VLS) mechanism. Spatial confinement of the nanowire growth region via focused laser beam illumination provides a convenient way to examine multiple growth parameters (temperature, time, illumination direction, and composition), thereby elucidating fundamental nanowires growth mechanisms. Furthermore, the work demonstrates an advanced method for direct synthesis of nanostructures for the purpose of practical rapid patterning including on demand multi-bandgap materials based nanowires.
- Heat Transfer Division
Multi-Parametric Growth of Semiconductor Nanowires in a Single Platform by Laser-Induced Localized Heat Sources
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Hwang, DJ, Ryu, S, Kim, E, & Grigoropoulos, CP. "Multi-Parametric Growth of Semiconductor Nanowires in a Single Platform by Laser-Induced Localized Heat Sources." Proceedings of the ASME 2012 Heat Transfer Summer Conference collocated with the ASME 2012 Fluids Engineering Division Summer Meeting and the ASME 2012 10th International Conference on Nanochannels, Microchannels, and Minichannels. Volume 1: Heat Transfer in Energy Systems; Theory and Fundamental Research; Aerospace Heat Transfer; Gas Turbine Heat Transfer; Transport Phenomena in Materials Processing and Manufacturing; Heat and Mass Transfer in Biotechnology; Environmental Heat Transfer; Visualization of Heat Transfer; Education and Future Directions in Heat Transfer. Rio Grande, Puerto Rico, USA. July 8–12, 2012. pp. 943-946. ASME. https://doi.org/10.1115/HT2012-58315
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