All-solution processed, low-temperature zinc oxide nanowire network transistor fabrication was demonstrated by combining 1) source-drain electrode fabrication by direct nanoimprinting of metal nanoparticle solution and 2) zinc oxide nanowire network based channel synthesized by a simple hydrothermal approach in water. This simple process can produce high resolution metal contact transistors with inorganic semiconductor nanowire active material in a fully maskless sequence, eliminating the need for lithographic and vacuum processes. The temperature throughout the processing was under 140°C, which will enable further applications to electronics on low-cost, large-area flexible polymer substrates.
- Heat Transfer Division
Low Temperature, All-Inorganic Nanoparticle Solution Process for ZnO Nanowire Network Transistor Fabrication on a Polymer Substrate
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Ko, SH, Park, I, Pan, H, Misra, N, & Grigoropoulos, CP. "Low Temperature, All-Inorganic Nanoparticle Solution Process for ZnO Nanowire Network Transistor Fabrication on a Polymer Substrate." Proceedings of the ASME 2009 Heat Transfer Summer Conference collocated with the InterPACK09 and 3rd Energy Sustainability Conferences. Volume 1: Heat Transfer in Energy Systems; Thermophysical Properties; Heat Transfer Equipment; Heat Transfer in Electronic Equipment. San Francisco, California, USA. July 19–23, 2009. pp. 771-775. ASME. https://doi.org/10.1115/HT2009-88062
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