Phonon transport in argon and silicon thin films is examined using harmonic lattice dynamics theory and the Lennard-Jones and Stillinger-Weber potentials. Film thicknesses ranging from 0.8 to 33.5 nm for argon and 0.4 to 8.6 nm for silicon are examined at a temperature of 0 K. Both reconstructed films and films built using the bulk unit cell are considered. Phonon dispersion curves for the in-plane direction and the density of states are computed from lattice dynamics and compared to predictions for a bulk system. The results from the lattice dynamics calculations are used to predict the thermal conductivities of the bulk and thin film structures.

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