Numerical Analysis of an Electromagnetic CZ-Si Growth Process by 3D Global Modeling

Three-dimensional (3D) thermal flow of silicon melt in an electromagnetic Czochralski (CZ) system was numerically investigated with a recently developed 3D global model. The electromagnetic CZ system was established with a transverse magnetic field and an injected electric current applied on the melt surface. Different azimuthal and radial positions of the electrode on the melt surface were taken into account to investigate their influences on the heat and mass transfer in the melt, as well as on the melt-crystal interface. The influence of the electric current direction on the melt flow pattern and temperature distribution was also demonstrated. The results showed that the position of the electrode on the melt surface and the direction of the applied electric current play an important role in controlling the heat and mass transfer in the silicon melt.