Three-dimensional (3D) thermal flow of silicon melt in an electromagnetic Czochralski (CZ) system was numerically investigated with a recently developed 3D global model. The electromagnetic CZ system was established with a transverse magnetic field and an injected electric current applied on the melt surface. Different azimuthal and radial positions of the electrode on the melt surface were taken into account to investigate their influences on the heat and mass transfer in the melt, as well as on the melt-crystal interface. The influence of the electric current direction on the melt flow pattern and temperature distribution was also demonstrated. The results showed that the position of the electrode on the melt surface and the direction of the applied electric current play an important role in controlling the heat and mass transfer in the silicon melt.
Skip Nav Destination
ASME 2005 Summer Heat Transfer Conference collocated with the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems
July 17–22, 2005
San Francisco, California, USA
Conference Sponsors:
- Heat Transfer Division and Electronic and Photonic Packaging Division
ISBN:
0-7918-4733-0
PROCEEDINGS PAPER
Numerical Analysis of an Electromagnetic CZ-Si Growth Process by 3D Global Modeling Available to Purchase
Satoshi Nakano,
Satoshi Nakano
Kyushu University, Kasuga, Japan
Search for other works by this author on:
Koichi Kakimoto
Koichi Kakimoto
Kyushu University, Kasuga, Japan
Search for other works by this author on:
Lijun Liu
Kyushu University, Kasuga, Japan
Satoshi Nakano
Kyushu University, Kasuga, Japan
Koichi Kakimoto
Kyushu University, Kasuga, Japan
Paper No:
HT2005-72496, pp. 229-235; 7 pages
Published Online:
March 9, 2009
Citation
Liu, L, Nakano, S, & Kakimoto, K. "Numerical Analysis of an Electromagnetic CZ-Si Growth Process by 3D Global Modeling." Proceedings of the ASME 2005 Summer Heat Transfer Conference collocated with the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems. Heat Transfer: Volume 3. San Francisco, California, USA. July 17–22, 2005. pp. 229-235. ASME. https://doi.org/10.1115/HT2005-72496
Download citation file:
12
Views
Related Proceedings Papers
Related Articles
Modeling of Heat Transfer and Kinetics of Physical Vapor Transport Growth of Silicon Carbide Crystals
J. Heat Transfer (December,2001)
Infrared Thermography and Thermoelectrical Study of a Solid Oxide Fuel Cell
J. Fuel Cell Sci. Technol (August,2008)
A Model of Dopant Transport During Bridgman Crystal Growth With
Magnetically Damped Buoyant Convection
J. Heat Transfer (February,2000)
Related Chapters
Electromagnetic Tensile Adhesion Test Method
Adhesion Measurement of Thin Films, Thick Films, and Bulk Coatings
Insulating Properties of W-Doped Ga2O3 Films Grown on Si Substrate for Low-K Applications
International Conference on Advanced Computer Theory and Engineering, 4th (ICACTE 2011)
Thermoelectric Coolers
Thermal Management of Microelectronic Equipment