A new physical vapor deposition source is developed to meet the challenges of barrier deposition for sub 100nm devices. The source employs multi-step process to deposit thin, conformal and uniform barrier films. This paper describes reactor scale modeling and simulation of deposition and etching plasmas used for barrier deposition. The modeling and simulation in tandem with experimental data demonstrate that the chamber can be used to independently control the particle fluxes as per the requirements of the deposition and etching steps. The simulation results were qualitatively used to optimize the ion flux uniformity by altering the magnetic fields near the wafer.

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