In the sublimation crystal growth process, source materials sublime at a higher temperature, and the resulting vapor transports to the seed crystal at a lower temperature where surface reaction and crystallization takes place. We have developed a two-dimensional numerical model to simulate the thermal and fluid fields in an AlN bulk growth system. A growth model that incorporates thermodynamic analyses, Stefan flow or diffusion transport, and growth kinetics has been developed to predict the growth rate of AlN bulk crystal. In addition, a thermomechanical stress model has also been developed to predict the thermal stress evolution in an AlN crystal.
Growth Kinetics and Wall Stress Effects in Sublimation Growth of AlN Bulk Crystals
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Wu, B, Ma, R, & Zhang, H. "Growth Kinetics and Wall Stress Effects in Sublimation Growth of AlN Bulk Crystals." Proceedings of the ASME 2003 Heat Transfer Summer Conference. Heat Transfer: Volume 3. Las Vegas, Nevada, USA. July 21–23, 2003. pp. 573-579. ASME. https://doi.org/10.1115/HT2003-47006
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