In SiC vapor growth, micropipes and dislocations that originate at the seed/boule interface can continuously propagate into the newly grown crystal. They adversely affect the quality of the crystals. The defect density can be reduced by the method of growing a large diameter crystal from a small seed through lateral growth under controlled thermal environment. In this paper, SiC growth processes with varying thermal conditions have been simulated. The effects of operational parameters such as axial and radial temperature gradients, and the presence of polycrystal are also investigated. The current finding can also help in the design of AlN/GaN growth system.

This content is only available via PDF.
You do not currently have access to this content.