HDP-CVD reactors are used for Shallow Trench Isolation (STI), Inter Metal Dielectric (IMD) and Inter Layer Dielectric (ILD) applications for logic and memory device fabrication. As device dimension shrinks, the trend has been to use lower pressure and higher plasma density for gap-fill with higher aspect ratio (AR). Higher AR gapfill in addition to higher throughput is achieved by running multiple wafers between a chamber clean, present a unique set of challenges for heat and mass-transfer in an HDP-CVD reactor. This paper describes some of the new state-of-the-art hardware innovations specifically developed to meet these challenges. In particular, heat transfer to plasma facing materials, fluid mechanics, and transport of sub-micron sized particles in the plasma environment of an HDP-CVD reactor are explored.
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ASME 2003 Heat Transfer Summer Conference
July 21–23, 2003
Las Vegas, Nevada, USA
Conference Sponsors:
- Heat Transfer Division
ISBN:
0-7918-3695-9
PROCEEDINGS PAPER
Heat and Mass Transport in HDP-CVD Chamber
Paddy Krishnaraj
Paddy Krishnaraj
DSM, Santa Clara, CA
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Hemant Mungekar
DSM, Santa Clara, CA
Bruno Geoffrion
DSM, Santa Clara, CA
Bikram Kapoor
DSM, Santa Clara, CA
Naren Dubey
DSM, Santa Clara, CA
Mak Salimian
DSM, Santa Clara, CA
Michael Cox
DSM, Santa Clara, CA
Paddy Krishnaraj
DSM, Santa Clara, CA
Paper No:
HT2003-47030, pp. 23-27; 5 pages
Published Online:
December 17, 2008
Citation
Mungekar, H, Geoffrion, B, Kapoor, B, Dubey, N, Salimian, M, Cox, M, & Krishnaraj, P. "Heat and Mass Transport in HDP-CVD Chamber." Proceedings of the ASME 2003 Heat Transfer Summer Conference. Heat Transfer: Volume 3. Las Vegas, Nevada, USA. July 21–23, 2003. pp. 23-27. ASME. https://doi.org/10.1115/HT2003-47030
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