Continuous Silicon Wafer Manufacturing by EFG Method Available to Purchase

A comprehensive two-dimensional numerical model, which accounts for heat/mass transfer, solidification, and electromagnetic field, has been developed to simulate the silicon tube growth by the Edge-defined film-fed (EFG) method. A multi-block grid system has been employed to yield a high accuracy in the vicinity of die tip with relatively low CPU time, and the solution procedure is satisfied the flux conservation at the block interface. Selected results of magnetic and temperature fields have been presented for the silicon tube growth system of 30cm in diameter and 0.3mm in thickness. Two local models have also been developed to study the effect of the size of window opening and tube thickness on the maximum growth rate using the inner and outer heater temperature profiles as boundary conditions.