A comprehensive two-dimensional numerical model, which accounts for heat/mass transfer, solidification, and electromagnetic field, has been developed to simulate the silicon tube growth by the Edge-defined film-fed (EFG) method. A multi-block grid system has been employed to yield a high accuracy in the vicinity of die tip with relatively low CPU time, and the solution procedure is satisfied the flux conservation at the block interface. Selected results of magnetic and temperature fields have been presented for the silicon tube growth system of 30cm in diameter and 0.3mm in thickness. Two local models have also been developed to study the effect of the size of window opening and tube thickness on the maximum growth rate using the inner and outer heater temperature profiles as boundary conditions.
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ASME 2003 Heat Transfer Summer Conference
July 21–23, 2003
Las Vegas, Nevada, USA
Conference Sponsors:
- Heat Transfer Division
ISBN:
0-7918-3695-9
PROCEEDINGS PAPER
Continuous Silicon Wafer Manufacturing by EFG Method Available to Purchase
C. Wang,
C. Wang
State University of New York at Stony Brook, Stony Brook, NY
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D. Sun,
D. Sun
State University of New York at Stony Brook, Stony Brook, NY
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H. Zhang,
H. Zhang
State University of New York at Stony Brook, Stony Brook, NY
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L. Zheng,
L. Zheng
State University of New York at Stony Brook, Stony Brook, NY
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B. Yang
B. Yang
State University of New York at Stony Brook, Stony Brook, NY
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C. Wang
State University of New York at Stony Brook, Stony Brook, NY
D. Sun
State University of New York at Stony Brook, Stony Brook, NY
H. Zhang
State University of New York at Stony Brook, Stony Brook, NY
L. Zheng
State University of New York at Stony Brook, Stony Brook, NY
B. Yang
State University of New York at Stony Brook, Stony Brook, NY
Paper No:
HT2003-47007, pp. 13-21; 9 pages
Published Online:
December 17, 2008
Citation
Wang, C, Sun, D, Zhang, H, Zheng, L, & Yang, B. "Continuous Silicon Wafer Manufacturing by EFG Method." Proceedings of the ASME 2003 Heat Transfer Summer Conference. Heat Transfer: Volume 3. Las Vegas, Nevada, USA. July 21–23, 2003. pp. 13-21. ASME. https://doi.org/10.1115/HT2003-47007
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