In this work, large-scale molecular dynamics simulation is conducted to explore nanoscale manufacturing with laser-assisted scanning tunneling microscope. Employing a super parallel computer, more than 100 million atoms are modeled to provide substantial details about how the localized thermal and mechanical perturbations result in surface nanostructures. It is found that thermal equilibrium cannot be established due to the small number of atoms. Extremely localized stress accumulation beneath the sample surface results in an explosion of the melted/vaporized material, leaving a nanoscale hole on the sample surface. Normal and shear stress development is observed. Stress propagation in space is strongly influenced by the anisotropic nature of the crystal. The high pressure in the melted/vaporized region pushes the melt adjacent to the solid to move, thereby forming a protrusion at the edge of the hole. More importantly, visible structural destruction is observed in the region close to the bottom of the sample. These destructions are along the direction of 45 degrees with respect to the axial direction, and are attributed to the strong tensile stress. Atomic dislocation is observed in the destructed regions.
Large-Scale Molecular Dynamics Investigation of Nanoscale Laser Material Processing
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Wang, X, & Zhu, H. "Large-Scale Molecular Dynamics Investigation of Nanoscale Laser Material Processing." Proceedings of the ASME 2003 Heat Transfer Summer Conference. Heat Transfer: Volume 3. Las Vegas, Nevada, USA. July 21–23, 2003. pp. 1-11. ASME. https://doi.org/10.1115/HT2003-47003
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