The in-plane thermal conductivity of periodic microporous single-crystal silicon membranes is simulated using a Monte Carlo method in the temperature range from 50K to 300K. The study focuses on the effect of pore boundary scattering. A gray body phonon transport is simulated, using a set of average phonon properties derived from the published experimental phonon dispersion curves. The simulation was first performed for bulk Si and the result is compared to the published experimental values. Porous Si membranes corresponding to our previous experimental configurations were then examined.
Monte Carlo Simulation of In-Plane Phonon Transport in Porous Silicon Membranes
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Song, D, & Chen, G. "Monte Carlo Simulation of In-Plane Phonon Transport in Porous Silicon Membranes." Proceedings of the ASME 2003 Heat Transfer Summer Conference. Heat Transfer: Volume 1. Las Vegas, Nevada, USA. July 21–23, 2003. pp. 617-620. ASME. https://doi.org/10.1115/HT2003-47592
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