This paper concerns with the basic investigations on the wet chemical etching of semiconductors. First, a method to observe the etched cross-section of aluminum layer is developed. It is applied to the observation for the cross-section of a test piece etched in a quiescent etchant. The observation successfully makes clear the time variation for the geometry of the etched cross-section, and elucidates the effects of the resist width on the geometry. Secondly, the numerical simulation for the etching process is performed. The simulated geometry of the etched cross-section is confirmed to agree with the observed result, indicating that the present numerical simulation is effectively used to predict the geometry of the etched cross-section.
Observation and Numerical Simulation for Wet Chemical Etching Process of Semiconductor
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Kaneko, K, Noda, T, Sakata, M, & Uchiyama, T. "Observation and Numerical Simulation for Wet Chemical Etching Process of Semiconductor." Proceedings of the ASME/JSME 2003 4th Joint Fluids Summer Engineering Conference. Volume 2: Symposia, Parts A, B, and C. Honolulu, Hawaii, USA. July 6–10, 2003. pp. 795-800. ASME. https://doi.org/10.1115/FEDSM2003-45707
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