A molecular dynamic method was used to simulate the film growth process of ionized cluster beam deposition for Fe clusters depositing on Cu substrate with low energy. The tight-binding many-body potential is used to simulate the interaction between atoms. It will focus on the diverse deposition process parameters including incident energy, and substrate temperature, and it will use atomic stress tensor to obtain the residual stress after the deposition process. During simulations, we will find out the critical value of the incident energy to create epitaxy growth or interfacial intermixing, observe the roughness of epitaxy growth surface to determine the quality of film, and compute the residual stress. From the simulation results, the effects of the deposition process parameters on the morphology of the deposited film could be evaluated.
Molecular Dynamics Simulation of Iron Clusters Deposition on Copper Substrate
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Hwang, S, Hong, Z, & Fang, T. "Molecular Dynamics Simulation of Iron Clusters Deposition on Copper Substrate." Proceedings of the ASME 2010 10th Biennial Conference on Engineering Systems Design and Analysis. ASME 2010 10th Biennial Conference on Engineering Systems Design and Analysis, Volume 5. Istanbul, Turkey. July 12–14, 2010. pp. 607-614. ASME. https://doi.org/10.1115/ESDA2010-24504
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