For simulation of anisotropic wet chemical etching, we consider the equations of microscopic etch rates and with a trial and error method we solve these equations. We use these results and a mathematical method to derive new equation for calculating of microscopic etches rates of surface atoms under a various range of concentrations and temperatures. A comparison is made between microscopic etch rates of basic surface atoms. The results of the corresponding simulations are in good agreement with the experiments.

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