Direct Wire-Bonding to Silicon Devices Without the Use of Metallic Layers

We present a novel method of direct wire-bonding of Silicon MEMS devices that does not require any metal bond-pads. We demonstrate that the strength and the conductivity of direct wire-bonds are comparable with those of standard bonds on metal bond-pads. Direct wire-bonding eliminates the metallization step, thus alleviating the constraint of consecutive high-temperature micromachining processes.