This paper describes the rapid formation of polycrystalline silicon films through seeding with silicon nanocrystals. The incorporation of seed crystals into amorphous silicon films helps to eliminate the crystallization incubation time observed in non-seeded amorphous silicon films. Furthermore, the formation of several tens of nanometer in diameter voids is observed when cubic silicon nanocrystals with around 30 nm in size are embedded in the amorphous films. These voids move through the amorphous film with high velocity, pulling behind them a crystallized “tail.” This mechanism leads to rapid formation of polycrystalline films.
- Advanced Energy Systems Division and Solar Energy Division
Bubbly Silicon: A New Mechanism for Solid Phase Crystallization of Amorphous Silicon
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Anderson, C, Cui, L, & Kortshagen, U. "Bubbly Silicon: A New Mechanism for Solid Phase Crystallization of Amorphous Silicon." Proceedings of the ASME 2009 3rd International Conference on Energy Sustainability collocated with the Heat Transfer and InterPACK09 Conferences. ASME 2009 3rd International Conference on Energy Sustainability, Volume 1. San Francisco, California, USA. July 19–23, 2009. pp. 977-978. ASME. https://doi.org/10.1115/ES2009-90320
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