This work describes computer simulations of various, Silicon on Insulator (SOI) Metal Oxide Semiconductor Field Effect Transistor (MOSFETs) with double and triple-gate structures, as well as gate-all-around devices. To explore the optimum design space for four different gate structures, simulations were performed with four variable device parameters: gate length, channel width, doping concentration, and silicon film thickness. The efficiency of the different gate structures is shown to be dependent of these parameters. Here short-channel properties of multi-gate SOI MOSFETs (MuGFETs) are studied by numerical simulation. The evolution of characteristics such as Drain induced barrier lowering (DIBL), sub-threshold slope, and threshold voltage roll-off is analyzed as a function of channel length, silicon film or fin thickness, gate dielectric thickness and dielectric constant, and as a function of the radius of curvature of the corners. The notion of an equivalent gate number is introduced. As a general rule, increasing the equivalent gate number improves the short-channel behavior of the devices. Similarly, increasing the radius of curvature of the corners improves the control of the channel region by the gate.
- Nanotechnology Institute
Modeling and Designing a Device Using MuGFETs
Lamba, VK, Engles, D, & Malik, SS. "Modeling and Designing a Device Using MuGFETs." Proceedings of the ASME 2008 3rd Energy Nanotechnology International Conference collocated with the Heat Transfer, Fluids Engineering, and Energy Sustainability Conferences. ASME 2008 3rd Energy Nanotechnology International Conference. Jacksonville, Florida, USA. August 10–14, 2008. pp. 89-93. ASME. https://doi.org/10.1115/ENIC2008-53015
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