One key challenge for silicon-based solar cells is the weak absorption of long-wavelength photons near the bandgap (1.1eV) due to the indirect bandgap of silicon. A large fraction of the AM 1.5 solar spectrum falls into a regime (0.7 μm – 1.1 μm) where silicon does not absorb light well. The capture of these long-wavelength photons imposes a particular problem to the thin-film silicon solar cells. For this reason, thin-film silicon solar cells often incorporate some forms of light trapping mechanisms.
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Surface-Plasmon Enhanced Near-Bandgap Light Absorption in Silicon Photovoltaics
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Hu, L, Chen, X, & Chen, G. "Surface-Plasmon Enhanced Near-Bandgap Light Absorption in Silicon Photovoltaics." Proceedings of the ASME 2008 3rd Energy Nanotechnology International Conference collocated with the Heat Transfer, Fluids Engineering, and Energy Sustainability Conferences. ASME 2008 3rd Energy Nanotechnology International Conference. Jacksonville, Florida, USA. August 10–14, 2008. pp. 11-12. ASME. https://doi.org/10.1115/ENIC2008-53056
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