Design objectives in capacitive type radio frequency micro electro mechanical switches (RF-MEMS) are to reduce actuation voltages and to obtain low insertion losses with high isolation. In this study, we report design, modeling and simulation of three new structural configurations using ANSYS to obtain the optimum geometry; further high frequency simulations are performed using HFSS to obtain low insertion losses and high isolation. The designed switches require only 3.9 to 5 V as pull-in voltage for actuation. The mechanical resonant frequency and quality factor are in the range of 6.5 to 8.7 kHz and 1.1 to 1.2, respectively. Switching times for all the designs are 32 to 38 μs at their respective pull-in voltages. Two of the switch designs have insertion loss of less than 0.25 to 0.8 dB at 60 and 50 GHz, and isolation greater than 58 dB for all three designs.
- Dynamic Systems and Control Division
Modeling and Validation of Capacitive Type RF MEMS Switches for Low Actuation Voltage and High Isolation
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Mohite, SS, Madhewar, M, & Sawant, VB. "Modeling and Validation of Capacitive Type RF MEMS Switches for Low Actuation Voltage and High Isolation." Proceedings of the ASME 2018 Dynamic Systems and Control Conference. Volume 1: Advances in Control Design Methods; Advances in Nonlinear Control; Advances in Robotics; Assistive and Rehabilitation Robotics; Automotive Dynamics and Emerging Powertrain Technologies; Automotive Systems; Bio Engineering Applications; Bio-Mechatronics and Physical Human Robot Interaction; Biomedical and Neural Systems; Biomedical and Neural Systems Modeling, Diagnostics, and Healthcare. Atlanta, Georgia, USA. September 30–October 3, 2018. V001T13A001. ASME. https://doi.org/10.1115/DSCC2018-8939
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