Obtaining uniform surface finish across large length scales is extremely important in Chemical Mechanical Planarization (CMP). Existing control strategies use results from model simulations to propose open-loop control strategies to reduce the step height on surfaces being polished. In the present work, we propose a strategy to control the surface profile of substrate during CMP process. The evolution of the surface profile is predicted using the state space model of the polishing process. The resulting state space equation is solved and a closed form solution of the surface profile is obtained as a function of time. Based on the solution, we provide a fundamental limitation for the machining process in terms of the extent of planarization that can be achieved for a given material budget.
- Dynamic Systems and Control Division
Modeling and Control of Surface Quality in Chemical Mechanical Planarization (CMP)
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Poosarla, P, Emadi, H, Chandra, A, & Bhattacharya, S. "Modeling and Control of Surface Quality in Chemical Mechanical Planarization (CMP)." Proceedings of the ASME 2017 Dynamic Systems and Control Conference. Volume 2: Mechatronics; Estimation and Identification; Uncertain Systems and Robustness; Path Planning and Motion Control; Tracking Control Systems; Multi-Agent and Networked Systems; Manufacturing; Intelligent Transportation and Vehicles; Sensors and Actuators; Diagnostics and Detection; Unmanned, Ground and Surface Robotics; Motion and Vibration Control Applications. Tysons, Virginia, USA. October 11–13, 2017. V002T16A004. ASME. https://doi.org/10.1115/DSCC2017-5240
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