Recent studies of wide band-gap diamond field emission devices have realized superior performance and lifetime. However, theoretical studies using standard Fowler-Nordheim (FN) theory do not fully capture the physics of diamond semiconductor emitters as a result of the fitting parameters inherent to the FN approximation. The following research computationally models wide band-gap field emission devices from a quantum point of view, using a novel non-equilibrium Green’s function (NEGF) approach previously applied to modeling solid-state electronic devices. Findings from this research confirm non-linearities in the FN curve and provide alternative explanations to discrepancies between standard FN theory.
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NEGF Quantum Simulation of Field Emission Devices
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Musho, TD, Claiborne, SM, & Walker, DG. "NEGF Quantum Simulation of Field Emission Devices." Proceedings of the ASME/JSME 2011 8th Thermal Engineering Joint Conference. ASME/JSME 2011 8th Thermal Engineering Joint Conference. Honolulu, Hawaii, USA. March 13–17, 2011. T30092. ASME. https://doi.org/10.1115/AJTEC2011-44504
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